杨吉辉
发布时间: 2018-11-26     文章作者:     访问次数: 2512

  

 

杨吉辉  

  

青年研究员

复旦大学博士

E-mailjhyang04@fudan.edu.cn

个人网站/Website

   

主要经历:
2008复旦大学学士

2013复旦大学博

2013-2016美国可再生能源国家实验室博士后

2016-2018美国Rice University博士后

2018-至今复旦大学物理系青年研究员

   

教学与研究领域:
研究领域:计算半导体物理。用基于第一性原理计算的方法来研究半导体材料中与电子结构相关的性质,包括缺陷、光学电学、磁性以及输运等性质同时,利用物理思想设计新型半导体材料,发表论文50余篇,共被引用2400多次。

Ji-HuiYang

  

Associate Professor

Ph.D.(2013), Fudan University

  

Research Interests:
1)Semiconductor theory, mechanism, and simulation methods

2)Semiconductors for photovoltaics, thermoelectrics, and electronics;

3)Materials by design

   

Selected Publications:
1) Ji-Hui Yang* and Boris I. Yakobson,* Unusual negative formation enthalpies and atomic ordering in isovalent alloys of transition metal dichalcogenide monolayers, Chem. Mater. 30, 1547 (2018).

2) Ji-Hui Yang,* Yueyu Zhang, Wan-Jian Yin, X.G. Gong, B. I. Yokobson, and Su-Huai Wei,* Two-dimensional SiS layers with promising electronic and optoelectronic properties: theoretical prediction, Nano Letters 2, 1110 (2016).

3) Ji-Hui Yang, Ji-Sang Park, Joongoo Kang, and Su-Huai Wei,* First-principles multiple-barrier diffusion theory: the case study of interstitial diffusion in CdTe, Phys. Rev. B 91, 075202 (2015)

4) Ji-Hui Yang, Ji-Sang Park, Joongoo Kang, Wyatt Metzger, Teresa Barnes, and Su-Huai Wei,* Tuning the Fermi level beyond the equilibrium doping limit through quenching: the case of CdTe, Phys. Rev. B 90, 245202 (2014).

5) J.-H. Yang, Z. L. Li, X. Z. Lu, M.-H. Whangbo, Su-Huai Wei, X. G. Gong,* and H. J. Xiang,* Strong Dzyaloshinskii-Moriya interaction and origin of ferroelectricity in Cu2OSeO3, Phys. Rev. Lett. 109, 107203 (2012).

6)Ji-Hui Yang, Yingteng Zhai, Hengrui Liu, Hongjun Xiang,* Xingao Gong,* and Su-Huai Wei, Si3AlP: a new promising material for solar cell absorber, J. Am. Chem. Soc 134, 12653 (2012).


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