杨吉辉  

青年研究员

复旦大学博士

E-mail：jhyang04@fudan.edu.cn

个人网站/Website：

主要经历:
2008复旦大学学士

2013复旦大学博士

2013-2016美国可再生能源国家实验室博士后

2016-2018美国Rice University博士后

2018-至今复旦大学物理系青年研究员

教学与研究领域:
研究领域：计算半导体物理。用基于第一性原理计算的方法来研究半导体材料中与电子结构相关的性质，包括缺陷、光学、电学、磁性以及输运等性质。同时，利用物理思想设计新型半导体材料，发表论文50余篇，共被引用2400多次。

Ji-HuiYang

Associate Professor

Ph.D.(2013), Fudan University

Research Interests:
1)Semiconductor theory, mechanism, and simulation methods

2)Semiconductors for photovoltaics, thermoelectrics, and electronics;

3)Materials by design

Selected Publications:
1) Ji-Hui Yang* and Boris I. Yakobson,* Unusual negative formation enthalpies and atomic ordering in isovalent alloys of transition metal dichalcogenide monolayers, Chem. Mater. 30, 1547 (2018).

2) Ji-Hui Yang,* Yueyu Zhang, Wan-Jian Yin, X.G. Gong, B. I. Yokobson, and Su-Huai Wei,* Two-dimensional SiS layers with promising electronic and optoelectronic properties: theoretical prediction, Nano Letters 2, 1110 (2016).

3) Ji-Hui Yang, Ji-Sang Park, Joongoo Kang, and Su-Huai Wei,* First-principles multiple-barrier diffusion theory: the case study of interstitial diffusion in CdTe, Phys. Rev. B 91, 075202 (2015)

4) Ji-Hui Yang, Ji-Sang Park, Joongoo Kang, Wyatt Metzger, Teresa Barnes, and Su-Huai Wei,* Tuning the Fermi level beyond the equilibrium doping limit through quenching: the case of CdTe, Phys. Rev. B 90, 245202 (2014).

5) J.-H. Yang, Z. L. Li, X. Z. Lu, M.-H. Whangbo, Su-Huai Wei, X. G. Gong,* and H. J. Xiang,* Strong Dzyaloshinskii-Moriya interaction and origin of ferroelectricity in Cu₂OSeO₃, Phys. Rev. Lett. 109, 107203 (2012).

6)Ji-Hui Yang, Yingteng Zhai, Hengrui Liu, Hongjun Xiang,* Xingao Gong,* and Su-Huai Wei, Si₃AlP: a new promising material for solar cell absorber, J. Am. Chem. Soc 134, 12653 (2012).