钟振扬
发布时间: 2013-08-22     文章作者:     访问次数: 21869

 

 

 

钟振扬

 

教授

2001年中科院物理所博士

电话:+86-21-31249030

Email   : zhenyangz@fudan.edu.cn

 

主要经历:
1990-1995北京大学学士学位

1995-1998中科院物理所硕博联读

1998-2000美国休斯顿大学物理系攻读博士学位(中科院物理所和美国休斯顿大学物理系联合培养)

2001.1获中科院物理所理学博士学位

2001.42003.12奥地利林茨大学半导体物理研究所博士后

2004.52005.4德国斯图加特MAX-PLANCK固体研究所博士后

2005.52005.12奥地利林茨大学半导体物理研究所博士后研究员

2006.1—至今复旦大学物理系副教授、教授

 

教学与研究领域:
教学:《大学物理》,《X射线衍射引论》。半导体纳米材料

(1)可控半导体纳米材料的生长,特性测量及其器件应用的探索;

(2)半导体纳米材料的光电特性研究

Phys. Rev. Lett.Appl. Phys.   Lett.SCI杂志上共发表论文39篇,其中20篇为第一作者(或通讯作者),这些论文共被引用超过550

 

Zhenyang Zhong

 

Professor

Ph.D.(2001),Institute of Physics, Chinese academy of Sciences

 

Research Interests:
controlled formation   of varieties of nanostructures on Si substratesexploration of the   unique properties and the applications of Si-based nanostructures.

 

Selected   Publications:
1.Y. Chen, B. Pan,   T. Nie, P. Chen, F. Lu,Z. Jiang and Z. Zhong, Enhanced photoluminescence due   to lateral ordering of GeSi quantum dots on patterned Si(001) substrates,   Nanotechnology 21,175701 2010

2.P. Chen, Y. Fan, Z.   Zhong,Fabrication and application of patterned Si (001) substrates with   ordered pits via nanosphere lithography, Nanotechnology 2095303 2009

3.Zhenyang Zhong, Peixuan Chen,   Zuimin Jiang, and Guenther Bauer, Temperature dependence of ordered GeSi   island growth on patterned Si (001) substrates, Appl. Phys. Lett. 93 (4),   043106-043109 (2008)

4.Z. Zhong, W.Schwinger, F.   Schäffler, G. Bauer, G. Vastola, F. Montalenti and L. Miglio, Delayed Plastic   Relaxation on Patterned Si Substrates: Coherent SiGe Pyramids with Dominant   {111} Facets Phys. Rev. Lett. 98, 176102 (2007)

5.Z. Zhong, O. G. Schmidt, and G.   Bauer, Increase of islands density via formation of secondary ordered islands   on pit-patterned Si (001) substrates, Appl. Phys. Lett. 87, 133111 (2005)

6.Z. Zhong, G. Bauer,   Site-controlled and size-homogeneous Ge islands on prepatterned Si (001)   substrates, Appl. Phys. Lett. 84, 1922 (2004).

7.Z. Zhong, A.Halilovic, M.   Mühlberger, F. Schäffler, and G. Bauer, Ge island formation on   stripe-patterned Si (001) substrates, Appl. Phys. Lett. 82, 445 (2003).


【关闭窗口】