杨新菊

教授

1994年复旦大学博士

电话：+86-21-31245337

Email：xjyang@fudan.edu.cn

个人网站/Website：链接/Link

主要经历:
1988: 复旦大学物理系学士；

1991: 复旦大学物理系硕士；

1994：复旦大学材料科学系博士；

1994-1999：复旦大学激光化学研究所讲师；

2000-2002：美国Houston大学博士后

2002-迄今: 复旦大学应用表面物理国家重点实验室副教授；  

2005-迄今: 复旦大学应用表面物理国家重点实验室副主任。

教学与研究领域:
1.扫描探针显微镜 (导电原子力显微镜、电场力显微镜、磁场力显微镜、扫描电势显微镜、扫描电容显微镜) 的应用研究；

2.纳米尺度力学、电学和磁学性质的研究；

3.半导体量子结构的制和单量子结构的电学性质研究；

4.新型纳米材料的制备及其性质研究（单层石墨、硅纳米线、DNA、蛋白质等）；

5.生物单分子的观测和操纵。

Xinju Yang

Professor

Ph.D.(1994), Fudan University

Research Interests:
Quantum structure   fabrications and nanoscale electrical property studies

Selected   Publications:
1. S. Wu, Z. L Wu, D. D. Lin, Z. Y. Zhong, Z. M. Jiang and X. J. Yang*, Photogenerated charges and surface potentialvariations investigated on single Si nanorods byelectrostatic force microscopy combined withlaser irradiation, Nanoscale Res. Lett. 9, 245 (2014).

2.S. H. Zhao, Y. Lv, X. J. Yang,   Layer-dependent nanoscale electrical properties of graphene studied by   conductive scanning probe microscopy, Nanoscale Research Letters 6,498   (2011).

3.R. Wu, S. L. Zhang, J. H. Lin,   Z. M. Jiang and X. J. Yang, Bias-dependent conductive characteristics of   individual GeSi quantum dots studied by conductive atomic force microscopy,   Nanotechnology 22, 095708 (2011).

4.P. L. Zhu, F. Xue, Z. Liu, Y. L.   Fan, Z. M. Jiang, and X. J. Yang，Influence of   annealing atmosphere on the magnetic properties of of SiO2/Fe/SiO2 sandwiched   nanocomposite films, J. Appl. Phys. 106, 043907(2009).

5.S. L. Zhang, F. Xue, R. Wu, J.   Cui, Z. M. Jiang, X. J. Yang, Conductive atomic force microscopy studies on   the transformation of GeSi quantum dots to quantum rings, Nanotechnology 20,   135703 (2009).

6.Y. Zhu, R. Wu, Y. Q. Wu, Y. L.   Fan, Z. M. Jiang, X. J. Yang, The influence of double-layer charge   interaction on charge injection and charge decay in Si nanocrystals,   Nanotechnology 18, 235403 (2007).

7.Wu, F. H. Li, Z. M. Jiang, and   X. J. Yang, Effects of a native oxide layer on the conductive atomic force   microscopy measurements of self-assembled Ge quantum dots, Nanotechnology 17,   5111 (2006).

8.F. Xue, J. Qin, J. Cui, Y. L.   Fan, Z. M. Jiang, and X. J. Yang，Studying the lateral   composition in Ge quantum dots on Si(001) by conductive atomic force   microscopy, Surf. Sci. 592, 65 (2005).